PART |
Description |
Maker |
SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
SPP11N60CFD07 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
http://
|
SPP24N60C3 SPP24N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG http://
|
SPS03N60C3 SPS03N60C308 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPA20N60CFD09 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP03N60C3 SPP03N60C309 SPA03N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPI11N60CFD |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPI07N65C3 SPA07N65C3 SPP07N65C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|